Diborane in Hydrogen
The mixture gas of diborane and hydrogen is mainly used as dopant for gaseous impurity source, ion implantation and boron doping oxidation diffusion.
The mixture gas of diborane and hydrogen is mainly used as dopant for gaseous impurity source, ion implantation and boron doping oxidation diffusion.
Hydrogen is a colorless, odorless, flammable gas and the lightest known gas. Hydrogen is generally non-corrosive, but at high pressures and temperatures, hydrogen can cause embrittlement in some steel grades. Hydrogen is non-toxic, but not life-sustaining, it is a suffocating agent.
High purity hydrogen finds widespread usage in the electronics industry as a reducing agent and as a carrier gas.
Hydrogen bromide is an inorganic compound with a chemical formula of HBr and a molecular weight of 80.91. It is a colorless gas with standard conditions and is the basic raw material for chemical synthesis.
Hydrogen bromide is an inorganic compound with a chemical formula of HBr and a molecular weight of 80.91. It is a colorless gas with standard conditions and is the basic raw material for chemical synthesis.
Hydrogen bromide is an inorganic compound with a chemical formula of HBr and a molecular weight of 80.91. It is a colorless gas with standard conditions and is the basic raw material for chemical synthesis.
Hydrogen chloride is a transparent colorless or slightly yellow strong corrosive liquid with a pungent odor. A concentrated hydrochloric acid contains 38% HCl, the relative density is 1.19, the melting point is -112°C, and the boiling point is -83.7°C. Hydrogen chloride is an important inorganic chemical raw material, widely used in dyes, medicine, food, printing and dyeing, leather, metallurgy and other industries.
The mixture gas of hydrogen and nitrogen is flammable gas, may explode when heated. It mainly used in X-ray fluorescence spectrometer, electronic detector and other instruments, laboratory research, etc..
Phosphorane is an important n-type doped source in semiconductor device manufacturing, and it is also used in polysilicon chemical vapor deposition, epitaxial GaP material, ion implantation process, MOCVD process, phosphorous silicon glass (PSG) passivation film preparation and other processes.
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