Trimethylsilylamine

TSA has multiple application areas, including but not limited to: Coatings, rubber, and plastics: Used as an additive or modifier to enhance material properties. Chemical synthesis: Employed as a precursor for producing other organosilicon compounds, such as aminosilanes. Semiconductor industry: Utilized in chip fabrication processes as a precursor for silicon nitride (Si₃N₄) and silicon oxynitride (SiON) layers. Deposition processes: Applied as a reactive precursor in Atomic Layer Deposition (ALD) and Chemical Vapor Deposition (CVD) for high-quality thin films. Production of Trimethylsilylamine (TSA) Trimethylsilylamine (TSA) is typically synthesized by reacting monochlorosilane with NH₃ under low-temperature conditions. It can also be obtained through alternative methods to achieve high-purity TSA, such as: Pyrolysis of polysilazane under oxygen-free or low-oxygen conditions at 300–600 °C. Amino transfer reaction between diisopropylaminosilane and ammonia under heating and pressure. At Jinhong Gas, TSA is produced by dissolving chlorosilane in toluene and gradually adding NH₃. The critical parameters lie in controlling the reaction temperature and the ammonia feed rate. Currently, Jinhong Gas achieves an annual production capacity of 10 tons of 3N-grade TSA.

Liquid Gas	Trimethylsilylamine
CAS No.	13862-16-3
Purity	≥99.9%
Silane	≤0.005 %
N2	≤0.05 %
DSA	≤0.030 %
DSO	≤0.015 %
Monochlorosilane	≤0.008 %
Other silanamines	≤0.20 %
Chlorine	≤0.008 %
Purity based on metal ions	≥99.9999 %