Disilane

Disilane (chemical formula: Si₂H₆) is a non-corrosive toxic gas. It is pyrophoric in air, with an ignition point below room temperature. Upon exposure to air, it ignites instantly and decomposes into silane (SiH₄) and hydrogen (H₂). Under its own vapor pressure, disilane exists as a liquid. It can be mixed in any proportion with hydrogen, argon, nitrogen, and helium.

Its boiling point is -14.3 °C, melting point is -132.6 °C, and critical temperature is 150.85 °C. Disilane has a wide flammability range: at concentrations above 0.2%, it burns with a visible flame; at concentrations below 0.2%, it undergoes oxidation, producing white SiO₂.

Disilane exhibits chemical properties similar to silane, but with higher reactivity. It is less stable than silane, decomposing slowly into silane and hydrogen at room temperature. At 300–500 °C, it decomposes into SiH₄, SinHm, and H₂, and also decomposes under light exposure.

Disilane is mainly used in applications such as solar cells, photoconductive drums, amorphous silicon films, epitaxial growth, oxide films, nitride films, and chemical vapor deposition (CVD).

Process

Disilane is typically produced through the high-temperature polymerization of silane (SiH₄). Other synthetic routes also exist, including: Silicothermic method: Using magnesium silicide (Mg₂Si) and ammonium chloride (NH₄Cl) in liquid ammonia under specific catalysts. Reduction method: Reducing hexachlorodisilane (Si₂Cl₆) or similar chlorosilanes with strong reducing agents such as lithium aluminum hydride (LiAlH₄). Jinhong Gas currently synthesizes disilane via high-temperature polymerization of silane. The key process control lies in precise temperature management during the reaction. Jinhong Gas’s current annual production of 5N disilane reaches 10 tons.
Liquid Gas Disilane
CAS No. 1590-87-0
Purity ≥99.999%
H2 <5 ppm
O2+Ar <1 ppm
N2 <1 ppm
CO <1 ppm
CO2 <1 ppm
Water content <1 ppm
Silane/SiH4 <50 ppm
Trisilane/Si3H8 <50 ppm
Chlorosilanes <0.2 ppm
Siloxanes <5 ppm
Hydrocarbons(C1~C4) <1 ppm

Applications

Semiconductor Manufacturing

Chemical Vapor Deposition (CVD): Used as a silicon source for depositing polycrystalline silicon films, epitaxial silicon single-crystal films, and tungsten silicide (WSi) films. Low-Pressure Chemical Vapor Deposition (LPCVD): Applied in the fabrication of advanced logic and memory chips (such as DRAM and 3D NAND), enabling uniform and conformal silicon film deposition on complex structures like trenches and holes. Solar Cell Industry: Serves as a precursor for depositing light-absorbing layers in amorphous silicon (a-Si) thin-film solar cells and microcrystalline silicon (μc-Si) stacked solar cells. Its low-temperature deposition characteristics help improve cell efficiency and stability.

New Material Research

Used as a precursor for synthesizing advanced ceramic materials such as silicon carbide (SiC) and silicon nitride (Si₃N₄), which are widely employed in high-temperature, high-frequency, and high-power electronic devices. Serves as a precursor for the preparation of silicon-based nanomaterials, including silicon quantum dots.

Frequently Asked Question

What product specifications do you offer?

Cylinder: DOT 47L Valve: DISS 623 Filling amount: 18 kg

How is disilane (Si₂H₆) produced?

Disilane is typically synthesized via a polymerization reaction of silane (SiH₄) under high-temperature conditions.

How should disilane be safely stored and handled?

Storage: Keep away from air (oxygen) and ignition sources. Maintain low temperatures (ideally below 30°C) and secure the cylinder to prevent tipping. Handling: Install combustible gas detectors linked to an alarm system. Detectors should be placed near the floor and potential leak points. Ensure sufficient dry powder or CO₂ fire extinguishers are available. Personnel should wear proper protective equipment, and absorbents such as sand or dry earth should be on hand. Clear emergency procedures should be posted.

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