Ethylsilicate (TEOS) is used as the raw materials used in semiconductor technology deposition can be used for low pressure chemical vapor deposition (LPCVD) the surface of silica in SiC wafers deposits, ensure the density of the oxide layer medium and SiC wafers adhesion ability, improve the performance of the device and yield, and avoided in order to obtain a certain thickness of oxide layer of the shortcomings of long time high temperature oxidation.
Product | TEOS |
CAS No. | 78-10-4 |
Purity | ≥99.9% |