Semiconductor

We provide integrated circuit/semiconductor customers a variety of specialty gas, which are needed by technical process such as diffusion, lithography, deposition, etching, doping, cleaning etc.

Corresponding Gas

Electronic Grade Nitrous Oxide

As an electron gas, nitrous oxide is mainly used in the dielectric film process for the development and production of semiconductor optoelectronic devices, and is an irreplaceable key idea gas that directly affects the quality of optoelectronic devices.

Nitrogen Trifluoride ,Sulfur Hexafluoride

The chemical reaction between electronic gas and the object to be etched is required in the etching industrial process. In the etching process of wafer manufacturing, in order to obtain the purpose of directional etching, it is necessary to use electronic special gas to remove the etched part.

TEOS

Ethylsilicate (TEOS) is used as the raw materials used in semiconductor technology deposition can be used for low pressure chemical vapor deposition (LPCVD) the surface of silica in SiC wafers deposits, ensure the density of the oxide layer medium and SiC wafers adhesion ability, improve the performance of the device and yield, and avoided in order to obtain a certain thickness of oxide layer of the shortcomings of long time high temperature oxidation.

Silane

In the semiconductor industry, silane is mainly used to make high-purity polysilicon, silicon dioxide film, silicon nitride film, polysilicon isolation layer, etc.It can also be used to make solar cells, optical fibers and photoelectric sensors.

Other Gas Fields

Corresponding GasSilaneSilane is produced by the reductionof silicon tetrachloride by metal hydrides such as lithium or calcium aluminum hydride.Silane is produced by treatment of magnesium siliciide with hydrochloric acid. Ammonia Tetrafluoromethae ma...

Corresponding GasSilaneSilane is produced by the reduction of silicon tetrachloride by metal hydrides such as lithium or calcium aluminum hydride.Silane is produced by treatment of magnesium silicide vwith hydrochloric acid. AmmoniaTetrafluoromethae ma...

Corresponding GasSilaneSilane is produced by the reduiction of silicon tetrachloride by metal hydrides such as lithium or calciuum aluminum hydride.Silane is produced by treatment of magnesium siliciede with hydrochloric acid. Ammonia Tetrafluoromethae ma...

Corresponding GasSilaneSilane is produced by the reduction ofsilicon tetrachloride by metal hydrides such as lithium or calcium aluminum hydride.Silane is produced by treatment of magnesium silicide vwith hydrochloric acid. AmmoniaTetrafluoromethae ma...

Corresponding GasSilaneSilane is produced by the reductionof silicon tetrachloride by metal hydrides such as lithium or calcium aluminum hydride.Silane is produced by treatment of magnesium silicidwith hydrochloric acid. AmmoniaTetrafluoromethae ma...

Corresponding GasSilaneSilane is produced by the reductionof silicon tetrachloride by metal hydrides such as lithium or calcium aluminum hydride.Silane is produced by treatment of magnesium silicicde with hydrochloric acid. Ammonia Tetrafluoromethae ma...