Tetraethyl Orthosilicate

Tetraethyl Orthosilicate

Ethylsilicate (TEOS) is used as the raw materials used in semiconductor technology deposition can be used for low pressure chemical vapor deposition (LPCVD) the surface of silica in SiC wafers deposits, ensure the density of the oxide layer medium and SiC wafers adhesion ability, improve the performance of the device and yield, and avoided in order to obtain a certain thickness of oxide layer of the shortcomings of long time high temperature oxidation.

Tetraethyl Orthosilicate (9N)

Ethylsilicate (TEOS) is used as the raw materials used in semiconductor technology deposition can be used for low pressure chemical vapor deposition (LPCVD) the surface of silica in SiC wafers deposits, ensure the density of the oxide layer medium and SiC wafers adhesion ability, improve the performance of the device and yield, and avoided in order to obtain a certain thickness of oxide layer of the shortcomings of long time high temperature oxidation.

This website uses cookies to improve your browsing experience. By continuing to use this website, you agree to our use of cookies.

Talk to Our Gas Experts....

Please enable JavaScript in your browser to complete this form.
Please enter your work email